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1Clear out junk files and repair common Windows errors2Fix the driver behind crashes, sound loss and screen glitches3Repair Windows errors before they cause bigger problemsIn 2020, Search For The Next (SFN) said its silicon-based Bizen quantum-junction transistors (QJTs) reached operating voltages as high as 1,200 V, with very low conductive losses and effective current gain above one million. Those results were reported by Electronic Design, but the publication said SFN had not disclosed how many wafers it tested or provided detailed wafer-test data. The reported figures therefore describe company claims, not an independently demonstrated comparison with silicon-carbide (SiC) or gallium-nitride (GaN) devices.
What are Bizen quantum-junction transistors?
Bizen is the name SFN used for a process associated with its proposed QJT power devices. According to a September 29, 2020 Electronic Design report by Lee Goldberg, the devices were made on conventional silicon substrates and used fewer process layers than a conventional device. The article attributed to SFN a claim that the process could shorten a typical 15-week CMOS wafer-processing cycle to three weeks and deliver a three-fold increase in gate density. Those figures were company claims in the article, not independently verified manufacturing results.
The term “wide-bandgap-like” refers to the performance comparison SFN made with power devices based on materials such as SiC and GaN. The 2020 report does not provide the underlying measurements needed to determine how closely the QJTs match those devices across operating conditions.
What performance did SFN report?
Electronic Design reported that SFN said its wafer tests showed operation up to 1,200 V, very low conductive losses, and effective current gain greater than one million. The article described the results as validating SFN’s claims, but also said the company had not disclosed the number of wafers tested and detailed test data were unavailable.
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Without test conditions and device-level data, the reported voltage and gain figures cannot establish comparative performance on their own. The report does not supply controlled comparisons for on-state loss, switching speed, thermal behavior, reliability, fabrication yield, or performance across package sizes. It also identifies no independent study or replication of the results.
What devices and roadmap did the 2020 report describe?
The article listed the following planned QJT ratings and package options. These were plans reported in 2020, not confirmation that the parts are currently available.
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| Device described | Rating | Package or status |
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| QJT | 1,200 V / 75 A | Planned; TO-247 or TO-263 |
| QJT | 900 V / 75 A | Planned; TO-247 or TO-263 |
| QJT | 650 V / 32 A | Planned; TO-247 or TO-263 |
| QJT roadmap device | 1,200 V / 100 A | Described as a short-term roadmap item |
SFN founder and CEO David Summerland also discussed combining power devices with digital logic and a future processor junction transistor (PJT). In the report, he said: “The QJT is the first power device on the Bizen family roadmap. This will shortly lead to the PJT (processor junction transistor), an integrated Bizen device with its own processor that can also be produced on a manufacturing cycle time of eight days, heralding a new era of intelligent power devices.” This was a roadmap statement in 2020; the article does not establish that a PJT shipped.
Can the QJT claims be compared directly with SiC and GaN?
Not from the information in the 2020 report. A useful comparison would need consistent data on rated voltage and current, conduction loss under specified test conditions, switching speed, thermal limits, reliability, physical size and package, manufacturing yield, integration capabilities, and commercial availability. The article does not provide enough detailed QJT test data or corresponding SiC and GaN results to make that comparison.
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Consequently, “WBG-like” should be read as SFN’s characterization as reported by Electronic Design, not as proof that the QJTs matched or surpassed SiC or GaN devices in a controlled evaluation.
Independent reader supportYour contribution helps us test, update, and keep practical guides available for everyone.What is established about availability?
The report describes a proposed device family and roadmap, but does not establish current product listings, distributor stock, pricing, production yield, reliability qualification, or current datasheets. Its package and rating details should not be treated as evidence that those parts can be purchased today. The cited article is Lee Goldberg’s September 29, 2020 report in Electronic Design: Silicon-Based Quantum-Junction Transistors Demonstrate WBG-Like Performance.
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