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IBM and Samsung announced VTFET in December 2021 as a transistor design that carries current vertically through the chip rather than laterally across its surface. IBM and Samsung said simulations suggested up to twice the performance or up to 85% less energy than a scaled FinFET under specified conditions. Those figures were projections, not results measured in a shipping processor; the announcement gave no consumer launch date.
What is VTFET?
VTFET stands for Vertical-Transport Nanosheet Field Effect Transistor. It is a transistor architecture developed by IBM Research and Samsung Electronics and announced on 14 December 2021. In a conventional lateral FinFET or nanosheet transistor, current flows along the wafer surface. In VTFET, the transistor is oriented perpendicular to that surface, so current travels vertically, or up and down.
The change is in the transistor’s physical layout and current path—not a new material or a finished chip product. IBM described VTFET as a possible route beyond constraints that make continued scaling of lateral nanosheet devices difficult.
How can a vertical transistor help with scaling?
In a lateral transistor, dimensions such as gate length, spacer thickness, contact size and the distance between gates compete for space along the wafer surface. As those features shrink, improving one can make it harder to optimize another.
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Turning the transport direction vertical can give designers more freedom to set those dimensions independently. IBM Research’s 2021 description and the associated IEDM work identify several potential design levers:
- Source/drain contacts: Larger contacts can support greater current.
- Gate length: Designers can choose a length to favor drive current or limit leakage.
- Spacer thickness: Adjusting it can tune capacitance.
These are potential advantages of the architecture, not a guarantee that every VTFET design will be faster, smaller or more efficient. The result depends on how a particular transistor and chip are designed and manufactured.
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VTFET versus FinFET: what the reported results mean
The headline performance and energy figures came from IBM and Samsung’s 2021 modeled comparison with a scaled FinFET at the same footprint and an aggressive gate pitch below 45 nm. The announcement described two alternative comparisons: higher performance at equivalent power, or lower energy use at equivalent frequency.
| Claim | Comparison condition | Evidence type |
|---|---|---|
| Up to 2× the performance | Against a scaled FinFET at the same footprint and sub-45 nm gate pitch, at equivalent power | Simulation reported by IBM and Samsung in 2021; not a measurement from a shipping processor |
| Up to 85% less energy use | Against a scaled FinFET at the same footprint and sub-45 nm gate pitch, at equivalent frequency | Simulation reported by IBM and Samsung in 2021; not a measurement from a shipping processor |
The alternatives should not be combined into one claim: the 2× figure is tied to equivalent power, while the energy reduction is tied to equivalent frequency. Neither number establishes the gain for a commercial chip or a comparison with every FinFET or nanosheet design.
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The IEDM work reported a separate kind of evidence: VTFET CMOS logic transistors fabricated on bulk silicon wafers at sub-45 nm gate pitch, along with functional ring oscillators. It reported subthreshold swing values of 69 and 68 mV/dec and drain-induced barrier lowering below 30 mV. Those device and test-circuit results show that the researchers built and electrically characterized VTFET hardware; they do not validate the announcement’s projected processor-level performance and energy figures.
Was VTFET commercialized, and when could it reach products?
The 14 December 2021 announcement did not give a consumer launch date or say that VTFET had entered volume production. It described research and prototyping at IBM’s Albany Nanotech Complex in New York. On the same occasion, IBM said Samsung would manufacture IBM’s 5 nm chips for IBM server platforms, following earlier 7 nm work. That manufacturing relationship is separate from evidence that VTFET itself was commercialized.
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Accordingly, the announced work supports saying that VTFET transistors and ring oscillators were demonstrated in research hardware. It does not establish when, or whether, a VTFET-based consumer processor or other product would be available.
Independent reader supportYour contribution helps us test, update, and keep practical guides available for everyone.What “extend Moore’s Law” means here
IBM framed VTFET as one possible way to keep improving transistor scaling as existing layouts face tighter dimensional trade-offs. In that context, “extend Moore’s Law” is a forward-looking description of the goal—not proof that VTFET guarantees a particular future pace of transistor-count growth or product releases.
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IBM also cited a future need for computing systems with up to 100 billion transistors. That figure was context for exploring new scaling approaches, not a VTFET chip specification or a product announcement.
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