FuYi PowerTech describes a four-generation silicon-carbide (SiC) MOSFET roadmap, progressing from planar D-MOS devices to a proposed SiC super-junction design. Its company-reported figures show lower specific on-resistance (RSp) at 1200 V across the generations, alongside broader voltage coverage. Those figures and development milestones come from FuYi’s own 2025 account; they are not independent performance verification, and the available information does not confirm whether G4 entered production after its projected Q2 2026 release.
What FuYi PowerTech makes
FuYi PowerTech describes itself as a third-generation semiconductor design house and power-device business. Its listed product categories include SiC bare die, SiC discrete devices and SiC modules, as well as IGBT discrete devices and modules. The company says its devices have passed automotive-grade qualifications and are designed into products for tier-1 automotive, energy-storage, photovoltaic (PV) inverter and charging-station companies. These are company statements, not independently audited assessments of particular products or qualifications.
In a 2025 company-authored EE Times Asia feature, FuYi also describes its approach as spanning device design, subcontracted manufacturing quality control, packaging co-design and application optimization. Its stated technical differentiators—including device-physics expertise, cell architecture, layout and doping design, switching behavior and thermal performance—should likewise be read as the company’s characterization.
How the four generations compare
The following figures and status descriptions are reported by FuYi in its 2025 roadmap article. RSp is specific on-resistance, expressed here in milliohm-square centimeters (mΩ·cm²). Lower RSp can be beneficial, but it does not by itself establish how a device performs in a finished application; switching, thermal, reliability, packaging and test conditions also matter.
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- High density cell design for low RDS(ON).
- Voltage controlled small signal switch.
- High saturation current capability.
| Generation | Architecture and pitch | Company-reported RSp at 1200 V | Reported voltage classes | Milestone reported by FuYi |
|---|---|---|---|---|
| G1 | Planar D-MOS, striped cells; 6.4 μm pitch | 5.1 mΩ·cm² | 1200 V | Market entry in Q1 2022 |
| G2 | Reduced-pitch design; 5.85 μm pitch | 4.2 mΩ·cm² | 650 V, 1200 V, 1700 V, 2200 V and 3300 V | Qualified in Q1 2023, according to FuYi |
| G3 | Hexagonal-cell architecture; pitch not stated | 3 mΩ·cm² | 650 V, 1200 V, 1700 V, 2200 V, 3300 V, 4500 V and 6600 V | Development began in Q4 2024; described as in final qualification in the 2025 article |
| G4 | SiC-adapted super-junction prototypes; pitch not stated | 1.7 mΩ·cm², described as an early prototype result | 1200 V figure reported for the RSp claim; broader voltage-class coverage not stated | FuYi projected production release in Q2 2026; production status is not independently confirmed here |
The voltage lists indicate the classes FuYi says it covers in G2 and G3; they do not establish that every class is currently orderable. The roadmap article does not provide comparable switching-loss, thermal, package, or reliability-test values for all four generations, so those characteristics cannot be ranked from the reported RSp figures alone.
What changes from G1 through G4
G1: planar D-MOS starting point
FuYi dates its SiC market entry to Q1 2022. Its reported G1 design used planar D-MOS striped cells with a 6.4 μm pitch and an RSp of 5.1 mΩ·cm² at 1200 V. This is the baseline against which the company presents later generations.
Rank #2
- Type: TO-92, N-Channel
- Drain-Source Voltage: 60V, Continuous Drain Current: 200mA
- High density cell design for low RDS(ON).
- Voltage controlled small signal switch.
- High saturation current capability.
G2: tighter pitch and expanded voltage range
For G2, FuYi reports reducing cell pitch from 6.4 μm to 5.85 μm and lowering 1200 V RSp from 5.1 to 4.2 mΩ·cm². It lists five voltage classes, from 650 V through 3300 V, and says G2 qualified in Q1 2023. The company connects this broader range to renewable-energy, rail and traction uses.
G3: hexagonal cells and higher-voltage classes
FuYi says G3 development began in Q4 2024. The company attributes improved current spreading and fewer parasitic effects to its hexagonal-cell architecture, and reports 3 mΩ·cm² RSp at 1200 V. Its listed classes extend to 4500 V and 6600 V. The 2025 article described G3 as in final qualification at that time; it does not establish a later qualification outcome.
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- Low Drain-source on-resistance.
- High input impedance.
- High-speed switching.
- CMOS logic compatible input.
- Voltage Rated: 60V, Current: 200 mA.
G4: early SiC super-junction prototypes
G4 is FuYi’s proposed move to super-junction technology adapted for SiC. The company reports an early prototype RSp of 1.7 mΩ·cm² at 1200 V and projected production release in Q2 2026. That date was a forward-looking statement in the 2025 article, not confirmation that production began. The available account also does not specify G4’s final product range, qualification results or commercial availability.
How to interpret the performance claims
The reported RSp figures are useful as a roadmap comparison, but the article does not state a test method or conditions alongside them, nor does it provide independent measurements. They therefore should not be treated as a like-for-like benchmark against other manufacturers or as a prediction of system-level efficiency. A buyer evaluating a specific part would need its datasheet and qualification documentation, with attention to operating conditions and the intended package and application.
Rank #4
- 1 Pcs Silicon Carbide Field Effect Transistor (MOSFET) GC3M0065100K SUPSiC MOSFET Silicon Carbide Field Effect Transistor TO-247-4
- RSp: A device-level resistance metric normalized by area. The listed values apply to the 1200 V comparison points FuYi reports, not necessarily to every voltage class in a generation.
- Voltage class: A portfolio category, not a complete operating specification. The roadmap does not supply the full ratings and conditions needed to select a part for a design.
- Qualification and production: The reported G2 qualification and G3 final-qualification status are company statements tied to the dates in the 2025 article. G4’s Q2 2026 production date was a projection; the sources available here do not confirm its outcome.
- System performance: Switching behavior, thermal management, package parasitics and reliability evidence affect suitability, but comparable data for the four generations are not supplied in the roadmap account.
Applications and product forms
FuYi identifies electric mobility, renewable energy, heavy industry and infrastructure as target sectors. Its official product information also names automotive, energy storage, PV inverters and charging stations. The company’s account associates the G2 voltage expansion specifically with renewable-energy, rail and traction applications. These are stated target uses, not evidence that every listed device has been validated for every application.
The portfolio categories offer several possible integration points: bare die for customers developing their own packages, discrete devices for board-level power designs, and modules for higher-level power assemblies. The information available does not list specific FuYi part numbers, module configurations, package options or orderable stock.
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Can buyers obtain FuYi SiC MOSFETs?
FuYi presents a business-to-business portfolio rather than a verified consumer retail listing. It says it seeks partners such as module integrators, OEMs, infrastructure developers and energy-solution providers. The published information establishes that FuYi lists SiC bare die, discrete devices and modules as product categories; it does not establish current inventory, a distributor, public pricing or confirmed availability for a particular generation or voltage class.
For a procurement or design inquiry, ask FuYi or an authorized sales channel to confirm the exact part number, voltage and current ratings, package, datasheet revision, qualification evidence, sample or production status, lead time and supply terms. For G3 or G4 in particular, verify the latest qualification and production status rather than relying on roadmap descriptions from 2025.
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