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There is no single universal, manufacturer-certified SPICE model for every 2N5457. For circuit exploration, start with this commonly circulated nominal approximation, which represents roughly IDSS = 3.3 mA and VGS(off) = -1.6 V:

.model M2N5457 NJF(
+ VTO=-1.6
+ BETA=1.29m
+ LAMBDA=2m
+ RD=1
+ RS=1
+ CGD=6p
+ CGS=2.25p
+ KF=6.5e-17
+ AF=0.5
)

This is a community approximation, not an onsemi-certified model. The onsemi datasheet allows IDSS from 1 to 5 mA and VGS(off) from -0.5 to -6 V, so real devices can behave very differently. For production, precision biasing, noise work, or an individual transistor, measure the part and fit the model.

Copy-paste netlist and model

A JFET instance uses drain, gate, source, then model name:

J1 D G S M2N5457

A complete small test circuit is:

VDD VDD 0 9
RD D VDD 2.2k
RS S 0 1k
RG G 0 1Meg
J1 D G S M2N5457

.model M2N5457 NJF(
+ VTO=-1.6
+ BETA=1.29m
+ LAMBDA=2m
+ RD=1
+ RS=1
+ CGD=6p
+ CGS=2.25p
+ KF=6.5e-17
+ AF=0.5
)

.op
.end

The operating point depends on the circuit, simulator temperature, convergence settings, and the model implementation. The approximation and its BETA calculation are documented by ElectroSmash; JFET syntax is specified in the ngspice manual.

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ALLECIN 2N5457 N-Channel Junction Field Effect Transistors 5457 JFET TO-92 25V 10mA (Pack of 10pcs)
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What the 2N5457 datasheet actually guarantees

The 2N5457 is a small-signal, n-channel depletion-mode JFET. Onsemi’s published values are limits or typical values under stated test conditions, not a complete statistical description of production devices.

Parameter Onsemi 2N5457 value
Drain-source voltage, VDS 25 V
Gate-source breakdown, V(BR)GSS -25 V minimum
IDSS 1–5 mA; 3 mA typical
VGS(off) -0.5 to -6 V
Forward transfer admittance 1–5 mS typical range shown
Ciss 7 pF maximum
Crss 3 pF maximum
Power dissipation 310 mW at stated datasheet conditions

The datasheet notes pulsed test data and that self-heating can reduce IDSS during DC operation. See the onsemi 2N5457 datasheet for test conditions, package drawing, and limits.

What each SPICE parameter does

  • VTO: threshold or pinch-off-related voltage; set here near VGS(off).
  • BETA: channel-current scale factor controlling the main transfer characteristic.
  • LAMBDA: channel-length-modulation analogue that adds drain-voltage dependence and output conductance.
  • RD and RS: internal drain and source series resistances, not external source or drain resistors.
  • CGD and CGS: fixed gate-drain and gate-source capacitance terms in this simple model.
  • KF and AF: flicker-noise parameters where the simulator supports them; the circulated values are approximate.

More advanced JFET implementations can model voltage-dependent capacitance and other effects. The ngspice manual describes its model levels and parameters.

Why no single “correct” 2N5457 model exists

The basic Shockley relationship is:

ID = IDSS × (1 − VGS / VGS(off))²

For a level-1 SPICE approximation:

VTO = VGS(off)
BETA ≈ IDSS / VTO²

For 3.3 mA and -1.6 V, BETA = 0.0033 / 1.6² ≈ 1.29 mS. Choosing other valid or illustrative values changes the model substantially:

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Chanzon 10pcs 2N5457 TO-92 N-Channel JFET Junction Field-Effect Transistor
  • Transistor Type: Junction Field-Effect Transistor (JFET) with N-Channel Polarity.
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  • Specification: Capable of handling a maximum Drain-Source voltage (VDSS) of 25V and a maximum Drain Current (ID) of 10mA.
  • Application: Ideal for use in electronic circuits such as audio amplifiers, general purpose amplifiers, and low power switching applications.
  • Package: Supplied in an Anti-Static bag for electrostatic protection, ensuring ESD safety and long shelf life.
Chosen nominal values VTO BETA
IDSS = 1 mA, VGS(off) = -0.5 V -0.5 V 4.00 mS
IDSS = 3 mA, VGS(off) = -1.2 V -1.2 V 2.08 mS
IDSS = 3.3 mA, VGS(off) = -1.6 V -1.6 V 1.29 mS
IDSS = 5 mA, VGS(off) = -3 V -3 V 0.556 mS
IDSS = 3 mA, VGS(off) = -6 V -6 V 83.3 µS

These examples are not a joint probability distribution; the datasheet does not establish how IDSS and VGS(off) correlate. A two-parameter model also omits device variation, output conductance details, leakage, voltage-dependent capacitance, temperature, self-heating, breakdown, and manufacturing differences.

Using the model in LTspice

  1. Create a text file named, for example, 2N5457.lib, and paste the .model block into it.
  2. Add a schematic directive .include 2N5457.lib, or place the model directly in the netlist.
  3. Place a JFET symbol and assign its model name as M2N5457. Ensure the symbol’s pins map to drain, gate, source in that order.
  4. Run an .op analysis before AC or transient analysis. Check drain current and VDS for plausible values.

LTspice is a free SPICE simulator with schematic capture and waveform viewing; its official page is Analog Devices LTspice. A symbol that looks correct can still be miswired if its hidden pin order is wrong.

Using it in ngspice, PSpice, or KiCad

In ngspice, put the model in the netlist or an included file and use an instance beginning with J:

.include 2N5457.lib
J1 D G S M2N5457

ngspice generally accepts many LTspice and PSpice parameters, but compatibility is not universal. Its compatibility guidance is at ngspice model parameters. KiCad can pass the same SPICE netlist to its simulator when the symbol is configured with an NJF/JFET model and matching pin order.

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If the simulator rejects a parameter

  1. Reduce the declaration to .model M2N5457 NJF(VTO=-1.6 BETA=1.29m LAMBDA=2m RD=1 RS=1).
  2. Confirm the instance starts with J, not M.
  3. Verify drain-gate-source ordering and that an NJF model is attached to a JFET symbol.
  4. Add CGD, CGS, then noise parameters one at a time.
  5. Read the first unsupported token in the simulator’s error log.

Pinout and package warning

For the onsemi TO-92 version, the datasheet marking diagram shows pin 1 as drain, pin 2 as source, and pin 3 as gate. Do not generalize that assignment to every manufacturer or package; verify the exact device drawing before wiring it. Swapping gate, drain, and source can make a valid model appear dead or produce nonsensical current.

When the nominal model is good enough

  • Early amplifier, buffer, fuzz, compressor, or preamp exploration.
  • Comparing topologies and estimating approximate bias or gain.
  • Educational demonstrations of depletion-mode JFET behavior.
  • Audio circuits with feedback or source degeneration where exact unit matching is not critical.

When to sweep or measure instead

Use a parameter sweep

Sweep illustrative cases such as IDSS of 1, 3, and 5 mA and VGS(off) of -0.5, -1.6, -3, and -6 V. Label these as boundary or sensitivity cases, not as a claimed statistical distribution. Sweeping is especially important for direct-coupled bias, no source degeneration, or randomly sourced parts.

Fit an individual-device model

Measure at least:

  • IDSS: drain current at VGS = 0 with sufficiently high VDS.
  • VGS(off): gate voltage at which current reaches a defined small test current.
  • Several ID–VDS curves at different gate voltages.
  • Gate leakage, and capacitance if high-frequency behavior matters.
  • Noise if the design requires a noise prediction.
  1. Set VTO approximately equal to measured VGS(off).
  2. Calculate BETA = IDSS / VTO².
  3. Simulate the same test conditions used for measurement.
  4. Adjust LAMBDA for output conductance and RD/RS for low-voltage behavior.
  5. Adjust capacitances and validate against a second set of curves.

A diode-test reading from a multimeter is not enough to identify a complete JFET model. InterFET’s modeling guidance warns that datasheet-derived parameters are guides, can be manufacturer-specific, and should be checked against measured behavior.

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Accuracy, alternatives, and buying considerations

Do not use the nominal model alone for guaranteed operating points, production tolerance analysis, precision current sources, RF matching, protection-limit verification, noise certification, or exact clipping prediction. Better options are a datasheet-boundary sweep, a model fitted to your measured transistor, a traceable manufacturer-specific model, or a behavioral model based on measured curves. A different JFET with tighter published specifications may also be easier to design around.

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Rank #4
Bridgold 10Sets 2N5457 2N5458 N−Channel JFETs Transistors,TO-92.
  • N−Channel for Higher Gain,Package Including:10pcs*2N5457+10pcs*2N5458
  • Drain and Source Interchangeable
  • High ACInput Impedance,High DC Input Resistance.
  • Low Transfer and Input Capacitance
  • Low Cross−Modulation and Intermodulation Distortion.

For measurement, Central Semiconductor’s current product listing is available through Microchip; it lists a TO-92, bulk product and identifies it as RoHS non-compliant. Availability and compliance should be checked for the exact order. Neither the onsemi datasheet nor that listing substitutes for a device-specific SPICE file.

Frequently Asked Questions

Is this an official onsemi 2N5457 SPICE model?

No. The supplied NJF statement is a commonly circulated nominal approximation. The onsemi source is a datasheet, not a dedicated downloadable SPICE model.

What is the correct 2N5457 pin order in a netlist?

Use drain, gate, source: J1 D G S M2N5457. Verify the physical package drawing because pinouts can differ by manufacturer.

Why does my simulated current differ from my transistor?

The datasheet permits wide variation: 1–5 mA for IDSS and -0.5 to -6 V for VGS(off). Fit the model to measured values or design with a parameter sweep.

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Can the same model run in LTspice and ngspice?

Often, but not always. If a simulator rejects a token, start with VTO, BETA, LAMBDA, RD, and RS, then add capacitance and noise parameters individually.

Is a 2N5457 interchangeable with a J201 or MPF102?

Do not assume interchangeability. Their electrical ranges, pinouts, availability, and model parameters differ; compare the specific datasheets and redesign or measure as needed.

Quick Recap

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Product prices and availability are accurate as of the date/time indicated and are subject to change. Any price and availability information displayed on Amazon at the time of purchase will apply.