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Integrating a gallium-nitride (GaN) FET with its gate driver and protection circuitry can simplify a power-supply design by reducing gate-loop parasitics, board area, and component count. Texas Instruments’ LMG3650R035 is one example: a 650-V, 35-mΩ TOLL-packaged device with adjustable switching slew rates and built-in fault protections. It is intended for demanding AC-DC designs, but its voltage, current, thermal, EMI, and topology limits still need to fit the application.
How integrated GaN drivers simplify a power supply
GaN is a wide-bandgap semiconductor technology suited to high-frequency switching. Compared with competing power semiconductor technologies, it can reduce the size of required passive components and lower gate-drive and reverse-recovery losses. Those benefits depend on the converter and operating conditions; they are not a guarantee of a particular system efficiency or size.
In a discrete design, the power switch, gate driver, and protection components are separate. Their interconnects add parasitic elements to the gate-drive loop, while each part consumes board area and contributes to the bill of materials. Combining a GaN FET, driver, and protection circuitry in one package can shorten those connections and simplify implementation. The designer still has to manage the power loop, thermal path, isolation, and surrounding control circuitry.
What protection is built into the LMG3650R035?
Texas Instruments specifies the LMG3650R035 as a 650-V GaN FET with 35 mΩ on-resistance, 20 A maximum drain current, and a 9.8 × 11.6 mm TOLL package. Its integrated driver allows turn-on and turn-off slew rates to be adjusted independently, letting designers trade switching performance against electromagnetic interference (EMI).
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- Undervoltage lockout (UVLO): helps prevent operation when the driver supply is below its operating threshold.
- Overvoltage and overtemperature protection: address excessive voltage and temperature conditions.
- Cycle-by-cycle overcurrent protection: responds to overcurrent on a switching-cycle basis.
- Latched short-circuit protection: TI specifies a response within 300 ns; a latched fault requires the appropriate reset or restart procedure rather than simply continuing normal switching.
TI also describes the device as able to withstand a 720-V surge while switching. That figure is a specified surge-withstand claim, not a replacement for checking the 650-V device rating, transient conditions, layout, and application requirements in the datasheet.
Where TOLL GaN devices fit
TI presents 650-V TOLL GaN devices for AC-DC conversion in topologies including totem-pole power-factor correction (PFC), LLC, phase-shifted full bridge, and dual-active bridge. They can be used in PFC and DC-DC stages in systems such as data-center power supplies, electric-vehicle onboard chargers, large-screen televisions, and bidirectional photovoltaic inverters.
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- High Quality Power Solution: This GaN power supply can supply for Raspberry Pi 5 current up to 5.1V/5A to Pi 5 motherboard. In addition, there is no problem that low voltage appears even in full-load power operation.
- 6-layer Protection Function: Includes various functions such as over-power protection, over-current protection, short-circuit protection, over-voltage protection, low-voltage protection, and electrostatic protection.
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Electronic Design reported TI’s claims of greater than 99% efficiency for a PFC stage and better than 98% for a DC-DC stage in 2025. These are stage-level figures reported by the publication, not universal results for every converter using the device. Efficiency depends on the topology, operating point, control, passive components, layout, and thermal conditions.
Choosing between integrated and discrete GaN
An integrated device is worth considering when a compact gate loop, fewer board-level parts, built-in fault handling, or faster design bring-up is valuable. Before substituting it for a discrete switch-and-driver design, compare the specific implementation against these requirements:
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- Output voltage: 3.3V, 5V
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- Electrical margin: verify bus voltage and transients against the 650-V rating, and assess continuous and peak current needs rather than relying on the 20-A maximum drain-current figure alone.
- Thermal design: evaluate conduction and switching losses, package heat flow, PCB copper, cooling, and worst-case temperature for the actual operating conditions.
- Switching and EMI: tune turn-on and turn-off slew rates independently, then validate switching losses, ringing, and conducted or radiated emissions in the real layout.
- Fault response: check how UVLO, overvoltage, overtemperature, cycle-by-cycle overcurrent, and latched short-circuit protection behave in the system, including fault recovery.
- Topology and isolation: confirm the device suits the intended PFC or DC-DC position and determine what isolation, bias, and control circuitry the design still requires.
- Implementation cost: account for the complete BOM and PCB footprint, not only the switch. A discrete solution may offer different flexibility or ratings; integration does not remove the need for external components.
Which evaluation board to use for a 650-V GaN half-bridge
The LMG3650EVM-114 evaluation card is the named starting point for prototyping a half-bridge with two LMG3650R035 devices. It includes digital isolators, isolated bias and bootstrap supplies, and isolated gate drivers. TI’s recommended lab equipment and supplies are:
- A 520-V DC supply
- A 12-V, 1.5-A bias source
- A function generator that produces adjustable 0–5-V square waves
- A 1-GHz oscilloscope
- A DC multimeter
- A load rated for up to 650 V or 20 A
These are source-recommended prototype provisions, not a complete safety procedure. High-voltage power conversion can be lethal: follow the evaluation-board documentation, use suitable isolation and rated instruments, and establish safe discharge and fault-handling practices before energizing a setup.
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- Dual Input Method: USB-C PD input can automatically handshake with Power Delivery (PD) to request 12V input; DC 5.5x2.1mm input is compatible with standard DC power supplies providing 9-24V wide voltage range
- High-Current Dual Output: USB-C and USB-A 2.0 Output. Delivers over 5A total output power through two convenient ports, capable of simultaneously powering a Raspberry Pi 5 and additional peripherals. Equipped with jumper, short it to increase output voltage by 0.2V
- Active Cooling: Equipped with a standard fan for temperature reduction, fan runs at full speed during operation and automatically stops when the load falls below 3A, ensuring quiet operation.
- 3D-Printed Base: Features a standard 3D-printed base for stable desktop placement and protects the module from scratches or damage
Other TI evaluation hardware mentioned
For broader power-stage prototyping, TI also lists two motherboards with different purposes and stated power capabilities:
| Board | Use described | Stated supported power |
|---|---|---|
| LMG342X-BB-EVM | Buck-boost motherboard | 4 kW, as stated by TI in 2025 |
| PFC23338EVM-107 | Totem-pole PFC motherboard | 3.6 kW, as stated by TI in 2025 |
These power figures describe the respective motherboards; they do not establish that either board is interchangeable with the LMG3650EVM-114 or that every system built around it will reach the stated output.
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- 【Raspberry Pi 5 Optimized GaN Power】Optimized for Raspberry Pi 5, the GaN USB-C PD design is intended for efficient, lower-heat, steady high-output power conversion to support demanding Pi 5 projects.
- 【Warning Reduction And Cable Reach】Designed to help reduce low-voltage or low-current warnings under a properly configured Raspberry Pi 5 load; the 120cm USB-C cable uses 18AWG wire for practical project-placement reach.
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- 【Compact Physical Design】The compact black plastic GaN adapter body is designed to occupy less space on a power strip, helping leave more room around nearby outlets.
- 【Compatibility And Package Check】Made for Raspberry Pi 5 with a USB-C power port, making model and connector verification straightforward before purchase. The package includes the power adapter.
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