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Outbyte PC Repair FREEClear out junk files and repair common Windows errorsFree Scan →Outbyte Driver Updater FREEScan for outdated or missing drivers - takes under a minuteDriver Scan →Infineon and Wolfspeed expanded and extended their silicon-carbide wafer supply agreement on January 23, 2024. The multi-year capacity reservation covers Wolfspeed-supplied 150 mm bare and epitaxial SiC wafers; Wolfspeed later disclosed an approximate total deal value of $275 million. It is a 150 mm supply pact—not Infineon’s separate 200 mm manufacturing program.
What did Infineon and Wolfspeed agree to supply?
The companies expanded and extended a long-term agreement first signed in February 2018. The change added a multi-year capacity reservation for Wolfspeed to supply Infineon with 150 mm silicon-carbide (SiC) wafers. Wolfspeed’s January 31, 2024 release specifies both bare and epitaxial wafers and puts the agreement’s total value at approximately $275 million. Wolfspeed’s announcement provides the value and wafer forms; Infineon’s January 23 announcement describes the expansion and its supply-chain purpose.
The releases do not state the contract’s exact duration, annual wafer volumes, price per wafer, or whether the arrangement is exclusive. The approximate $275 million is the total disclosed value, not a per-year figure.
Why are 150 mm SiC wafers important?
SiC is a semiconductor material used in power devices that manage electrical energy. Infineon and Wolfspeed connect the supply agreement to products and systems for electric vehicles, charging infrastructure, solar power, energy storage, industrial power supplies, and traction or variable-speed drives. The companies say SiC can support more efficient energy conversion and help enable smaller, lighter, and more cost-effective designs. The agreement is intended to give Infineon more dependable access to wafer supply as demand in these markets grows.
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#1 Best Overall
- Silicon carbide (SiC) 4H conductive wafers/square sheets, thickness 0.35 mm, for research and development experiments in power electronics and optoelectronics.
- Silicon carbide has a wider bandgap, enabling it to withstand higher operating temperatures, the bandgap of silicon carbide is approximately three times that of silicon, with a theoretical operating temperature exceeding 400°C.
- The critical breakdown field strength of silicon carbide is approximately ten times that of silicon, enabling it to withstand higher voltages and making it more suitable for high-voltage devices.
- The high thermal conductivity of silicon carbide effectively conducts heat, reduces device temperature, and maintains normal operation, its saturated electron drift velocity is twice that of silicon, which helps increase operating frequency and enables device miniaturization.
Wolfspeed’s 2024 release also cites an industry estimate of a $20 billion annual opportunity through 2030 for SiC devices and supporting material. That is a forward-looking estimate attributed to Wolfspeed, not an independently verified market-size measurement in the cited releases.
Is this Infineon’s 200 mm SiC agreement?
No. The Wolfspeed pact covers 150 mm wafers. Infineon’s move to 200 mm SiC manufacturing is a separate initiative. In a February 13, 2025 roadmap update, Infineon said it planned to release its first products based on 200 mm SiC technology to customers in Q1 2025. It also said production in Villach, Austria, was part of that effort and that the 150 mm-to-200 mm transition at Kulim, Malaysia, was on track. Infineon’s roadmap update describes that manufacturing program.
Rank #2
- Silicon carbide (SiC) 4H conductive wafers/square sheets, thickness 0.35 mm, for research and development experiments in power electronics and optoelectronics.
- Silicon carbide has a wider bandgap, enabling it to withstand higher operating temperatures, the bandgap of silicon carbide is approximately three times that of silicon, with a theoretical operating temperature exceeding 400°C.
- The critical breakdown field strength of silicon carbide is approximately ten times that of silicon, enabling it to withstand higher voltages and making it more suitable for high-voltage devices.
- The high thermal conductivity of silicon carbide effectively conducts heat, reduces device temperature, and maintains normal operation, its saturated electron drift velocity is twice that of silicon, which helps increase operating frequency and enables device miniaturization.
Infineon CEO Jochen Hanebeck characterized the company’s broader approach as multi-source: securing access to a global, long-term supply base of both 150 mm and 200 mm SiC wafers. That context helps explain how the Wolfspeed supply pact can strengthen the supply chain while Infineon develops its own 200 mm capabilities; it does not turn the pact into a 200 mm contract.
Quick Recap
Best Value
- Wafer Pattern May Vary from the Product Images. Great to be used as gift, display object, exhibition, educating demonstration, testing, decoration or your collection
- Beautiful microchip pattern structure made by the advanced copper technology
- 90~130nm minimum microchip feature Copper Characterization with TEOS or Black Diamond Low-k ILD on the single crystal silicon wafer
- The original value of un-polished wafer is above $500
- No guarantee for research and other applications
Rank #4
- 4H Silicon Carbide (SiC) wafers devised for advanced research and development in power electronics and optoelectronics.
- With a thickness of 0.35mm, these conductive square sheets can withstand operating temperatures exceeding 400°C, making them ideal for high-temperature applications.
- Exceptional breakdown field strength, approximately ten times that of silicon, allows for reliable operation in high-voltage devices.
- Superior thermal conductivity effectively dissipates heat, reducing device temperature and ensuring stable performance during operation.
- Enhanced electron drift velocity, twice that of silicon, facilitates increased operating frequencies and supports the miniaturization of electronic devices.
Rank #3
- Wafer Pattern May Vary from the Product Images. Great to be used as gift, display object, exhibition, educating demonstration, testing, decoration or your collection
- Beautiful microchip pattern structure made by the advanced copper technology
- 90~130nm minimum microchip feature Copper Characterization with TEOS or Black Diamond Low-k ILD on the single crystal silicon wafer
- The original value of un-polished wafer is above $500
- No guarantee for research and other applications
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