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A free scan shows the junk files, broken settings and background clutter dragging Windows down - then fixes them in one click.Free scan · Windows 10 & 11For most new switching designs, start with a power MOSFET: silicon MOSFETs usually suit low-to-medium voltage and high frequency, while SiC MOSFETs extend that advantage into high-voltage, fast-switching stages. Choose an IGBT when voltage and power are high, switching frequency is moderate, and its relatively fixed on-state drop beats the hot resistance of a high-voltage silicon MOSFET. Choose a power BJT only for a specific linear, legacy, low-frequency, or cost-driven reason.
Do not make the decision from voltage alone. Compare hot conduction, switching, gate or base drive, diode, thermal, protection, layout, and lifecycle costs at the actual topology operating point.
First, define “FET”
In power-stage discussions, “FET” normally means a power MOSFET. That category now includes conventional silicon MOSFETs, silicon-carbide (SiC) MOSFETs, and gallium-nitride (GaN) FETs. They do not share the same voltage range, reverse-conduction behavior, gate-drive requirements, or switching performance. A 40 V silicon MOSFET, a 1,200 V SiC MOSFET, and a 650 V GaN device must be evaluated as different technologies.
The comparison below focuses first on a silicon power MOSFET, an IGBT, and a power BJT, then explains when SiC or GaN changes the shortlist.
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Quick comparison
| Criterion | Power MOSFET | IGBT | Power BJT |
|---|---|---|---|
| Control | Insulated gate voltage | Insulated gate voltage | Base current |
| Conduction model | I²RDS(on) | Approximately VCE(sat) × I | Approximately VCE(sat) × I |
| Switching speed | Generally fastest | Moderate; turn-off tail can matter | Generally slowest |
| Steady-state drive | Low DC current; dynamic gate charge matters | Low DC current; dynamic gate charge matters | Continuous base current can be substantial |
| High-voltage behavior | Silicon resistance rises with voltage rating; SiC changes the trade-off | Strong at high voltage and power | Possible, but rarely the first modern choice |
| Reverse-current path | Intrinsic body diode, with device-specific recovery | Usually a co-packaged or external diode | Usually an external diode |
| Typical uses | DC-DC, synchronous rectification, low-voltage drives | Motor drives, UPS, industrial inverters, PFC | Legacy stages, linear amplifiers, special low-frequency circuits |
| Main weakness | Hot RDS(on), capacitance, and diode losses | Switching loss and tail current | Base-drive power, storage time, thermal instability, second breakdown |
This first-pass summary is consistent with the manufacturer comparison from Toshiba. It is a screening guide, not a universal frequency or voltage rule.
How the devices work
Power MOSFET
A MOSFET is controlled by an insulated gate. Ideal steady-state gate current is nearly zero, but the driver must charge and discharge gate and Miller capacitances every cycle. The channel behaves approximately as a resistance, characterized by RDS(on). Gate resistance, driver strength, parasitic inductance, and operating temperature determine the actual transitions.
IGBT
An IGBT uses a MOSFET-like insulated gate to control a bipolar-conduction output. Conductivity modulation gives high-voltage devices a relatively low on-state voltage, commonly specified as VCE(sat). Stored charge produces a turn-off tail, so an IGBT is generally slower than a comparable MOSFET. Toshiba describes this combination of MOSFET input impedance and BJT-like low on-state voltage here.
Power BJT
A BJT is current-controlled. The driver must supply base current during conduction, using a forced-beta value that remains safe across temperature and production variation rather than an optimistic nominal gain. Saturation stores charge and can lengthen turn-off. Base-emitter reverse-voltage protection, anti-saturation measures, second-breakdown limits, and thermal stability all require attention. Infineon discusses these trade-offs in its gate-drive application note.
The variables that decide the choice
1. Blocking voltage and transients
Start with minimum and maximum bus or line voltage, then add switching overshoot, regeneration, load dump, avalanche events, and required derating. A device rated only for the nominal bus is not a safe selection. High voltage capability raises the resistance of a silicon MOSFET because its drift region must block more voltage; IGBT conductivity modulation avoids much of that penalty. Sources: Toshiba device explanation and Toshiba comparison.
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2. The complete current waveform
Use average, RMS, peak, startup, ripple, commutation, short-circuit, and—if applicable—shared current. A headline continuous-current rating is not a loss calculation; package temperature, PCB copper, SOA, and duty cycle limit usable current.
3. Switching frequency and topology
Frequency multiplies turn-on and turn-off energy, gate-drive loss, and diode recovery loss. Hard-switched bridges emphasize Eon, Eoff, overlap, reverse recovery, ringing, and EMI. Resonant, phase-shifted, or zero-voltage-switched circuits can reduce those terms enough to change the preferred technology. The same transistor can be suitable in a soft-switched converter and poor in a hard-switched bridge.
4. Thermal conditions
Estimate junction temperature with TJ = TA + PlossθJA, or TJ = TC + PlossθJC for a case-mounted package. Include interface and heatsink resistance, airflow, PCB copper, transient thermal impedance, and the temperature dependence of RDS(on), VCE(sat), switching energy, and leakage. A room-temperature ranking can reverse at the actual junction temperature.
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Use Ptotal = Pconduction + Pswitching + Pdrive + Pdiode + Pleakage. Analog Devices presents the MOSFET buck-converter conduction form and separates switching, gate-drive, and dead-time diode terms in AN-140.
MOSFET
Use Pcond ≈ IRMS2 RDS(on)(TJ) D. Use the hot resistance, not only the 25 °C value. Add body-diode conduction during dead time and output-capacitance and reverse-recovery interactions where relevant.
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IGBT
Use Pcond ≈ VCE(sat)(I,TJ) Iavg D. A closer linearized model is VCE ≈ V0 + rCEI, giving Pcond ≈ V0IavgD + rCEIRMS2D. Read the manufacturer’s curves at your current and temperature.
BJT
Use Pcond ≈ VCE(sat)IavgD and include base-drive loss, approximately Pbase ≈ VdriveIBD. Forced beta, saturation, storage time, and gain variation can make the driver loss significant.
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A first estimate is Psw ≈ (Eon + Eoff) fs. The energies depend on voltage, current, gate resistance, driver current, temperature, diode, stray inductance, and topology. Gate-drive power is approximately Pdrive ≈ QgVdrivefs per device; Power Integrations explains why driver sizing must use actual gate charge and switching conditions.
Do not omit the commutation path
MOSFET body diode
A conventional MOSFET includes an intrinsic diode. Check its forward drop, reverse-recovery charge, recovery current, dead-time conduction, and hard-commutation behavior. The diode is not automatically an advantage in a high-frequency bridge.
IGBT freewheel diode
An IGBT normally needs a co-packaged or external antiparallel diode for reverse current. Evaluate that diode’s recovery and thermal loss as part of the complete module.
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BJT freewheel diode
A BJT generally needs an external diode wherever the topology requires freewheeling or reverse current. Compare complete switch cells—MOSFET plus body diode, IGBT plus module diode, or BJT plus external diode—not transistor-only figures.
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Driver and layout consequences
MOSFET and IGBT gates
Check source and sink current, gate resistance, Miller clamp or immunity, false turn-on, common-source or emitter inductance, high-side level shifting, bootstrap refresh, isolation, gate-voltage limits, dead time, and undervoltage lockout. High-side N-channel arrangements may require floating drivers and bootstrap parts; Analog Devices covers these arrangements in AN-006. IGBT designs additionally require tail-current management, desaturation protection, short-circuit withstand verification, and often negative gate bias.
BJT base drive
Design for forced beta, controlled base-current rise and fall, anti-saturation or storage-time reduction, base-emitter reverse protection, driver dissipation, gain spread, and second breakdown. A cheaper transistor can require a more expensive and hotter driver.
Physical implementation
Validate gate-loop and power-loop inductance, Kelvin source or emitter connections, propagation-delay matching, negative transients, gate clamps, isolation, and common-mode transient immunity. Faster edges can reduce switching loss while increasing overshoot, ringing, EMI, common-mode current, and false turn-on risk.
When each device is usually the best starting point
Silicon MOSFET
Start here for roughly 5–48 V systems, battery equipment, synchronous buck or boost converters, telecom and computer supplies, low-voltage motor drives, and high-frequency transformer stages. Choose using hot RDS(on), not a marketing frequency label. An unnecessarily high voltage rating can increase conduction loss; Analog Devices makes this point in AN-140.
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- Power Transistor / Voltage Regulator Assortment, 95pcs and 27 types
- Voltage Regulators: 78L05, L7805, 79L05, L7905, 78L12, L7812, L7824, LM317, TL431, Thyristors: MAC97A6, BT134-600E, BTA06
- Power Transistors: TIP31C, TIP32C, TIP41C, TIP42C, D882, B772, BD139, BD140, Mosfets: IRF1404,IRF540, IRFZ44,2N7000, Darlingtons: TIP122, TIP127
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IGBT
Start with an IGBT for high-voltage motor inverters, industrial drives, UPS, welding equipment, high-voltage PFC, and other substantial-power stages at moderate frequency, especially when a high-voltage silicon MOSFET’s resistance is excessive. Compare tail and diode losses before deciding. Toshiba lists these high-voltage, high-current applications in its comparison.
BJT
Consider a BJT for linear amplification, low-frequency control, a qualified legacy design, or a narrowly cost-sensitive circuit with an existing base-drive solution. BJTs are not categorically obsolete, but they are rarely the default for a new high-frequency SMPS or inverter.
Independent reader supportYour contribution helps us test, update, and keep practical guides available for everyone.Application guide
| Design condition | Likely first choice | Why | Exception to check |
|---|---|---|---|
| Low-voltage, high-current synchronous buck | Silicon MOSFET | Low hot resistance and fast switching | Package, copper, and dead-time losses |
| High-frequency isolated converter | MOSFET, SiC MOSFET, or GaN | Switching loss dominates | IGBT only at moderate frequency |
| High-voltage motor inverter at moderate frequency | IGBT or SiC MOSFET | IGBT conduction economics; SiC switching advantage | Compare complete diode and module losses |
| Linear audio or power amplifier | BJT or MOSFET | Linear gain and transconductance matter | IGBT is rarely suitable |
| Bidirectional high-frequency bridge | MOSFET, SiC, or GaN | Reverse conduction and commutation dominate | Verify body-diode or external-diode recovery |
| High-voltage, lower-frequency chopper | IGBT | Lower conduction penalty than a high-voltage silicon MOSFET may win | SiC can win as frequency or efficiency rises |
A representative frequency crossover example
Consider a 400 V DC bus and a 15 A motor-inverter leg. The following is an illustrative calculation, not a measured comparison. Assume a MOSFET has 0.20 Ω hot RDS(on), the IGBT drops 2.0 V at the operating current, each device conducts for an effective D = 0.5, and RMS and average current are both 15 A for this simplified example.
- MOSFET conduction: 15² × 0.20 × 0.5 = 22.5 W.
- IGBT conduction: 2.0 × 15 × 0.5 = 15 W.
- At 20 kHz, an IGBT can therefore have a conduction advantage if its measured Eon, Eoff, and diode losses remain acceptable.
- At 200 kHz, ten times as many switching events make the IGBT’s tail and diode recovery much more consequential; a lower-energy silicon MOSFET, SiC MOSFET, or GaN device may produce lower total loss despite a different conduction result.
Replace every illustrative value with datasheet curves measured or specified at the actual voltage, current, gate resistance, temperature, and topology.
Selection workflow
- Define the envelope: minimum and maximum input, output, RMS and peak current, duty range, frequency, ambient, cooling, transients, faults, efficiency, isolation, and safety margin.
- Identify the topology: buck, boost, bridge, resonant converter, PFC, flyback, motor drive, or linear stage. High-side position, commutation, and freewheel requirements change the answer.
- Set the technology shortlist: silicon MOSFET for low or moderate voltage; include SiC at high voltage and frequency, GaN at very high frequency and density, IGBT at high voltage and moderate frequency, and BJT only with a specific rationale.
- Calculate hot conduction loss: use temperature-adjusted RDS(on), VCE(sat), or BJT VCE(sat) plus base-drive power.
- Calculate switching and diode loss: use Eon, Eoff, Qrr, Qoss, and Qg under comparable test conditions. Do not transfer energy figures between parts without matching voltage, current, temperature, gate resistance, driver, and topology.
- Verify faults and SOA: check continuous and pulsed SOA, short-circuit withstand, avalanche, repetitive peak current, gate-oxide limits, thermal cycling, current crowding, and surge behavior.
- Validate the driver and layout: confirm source/sink current, delay matching, dead time, bootstrap or isolation, gate-loop inductance, Kelvin connections, Miller immunity, clamps, and negative transients.
- Compare system cost: include switch or module, driver and isolated supply, diode, snubber, heatsink or cold plate, EMI filter, protection, PCB area, assembly, qualification, availability, and lifecycle risk.
When SiC or GaN changes the answer
SiC MOSFETs
SiC MOSFETs can displace IGBTs in high-voltage, high-frequency PFC, solar, onboard-charger, and industrial inverter stages by reducing switching and diode losses. They cost more, so the business case depends on efficiency, cooling, magnetics, and power density. See Infineon’s CoolSiC and onsemi’s EliteSiC portfolios.
GaN FETs
GaN is relevant to very-high-frequency, high-density stages where low charge and fast transitions justify tighter layout and EMI control. Include it only when voltage, current, driver capability, insulation, and commutation requirements fit the selected device. Manufacturer areas include Infineon GaN, Texas Instruments GaN drivers, and onsemi GaN.
Datasheet and prototype checklist
- Voltage rating at worst-case bus and transient conditions
- Hot RDS(on) or VCE(sat) at the real current
- Eon, Eoff, Qg, Qgd, Qoss, and Qrr
- Body-diode or co-packaged-diode recovery data
- SOA, short-circuit rating, avalanche limits, and repetitive surge capability
- Thermal impedance, maximum junction temperature, package and Kelvin options
- Gate-voltage limits, Miller behavior, recommended gate resistance, and driver compatibility
- Qualification, active lifecycle status, second sources, package availability, and distributor stock
- Measured overshoot, ringing, switching energy, EMI, and junction or case temperature on the prototype
For measurement practice, Tektronix describes switching-loss, ringing, and overshoot validation in its oscilloscope application note. Distributor catalogs such as DigiKey’s gate-driver listing help check package and status, but never replace the manufacturer datasheet.
Quick Recap
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