Macronix’s documented non-volatile memory portfolio spans custom ROM, NOR Flash, NAND Flash and embedded NVM. Its development record includes NBit, a nitride-based charge-trap approach announced in 2005; a 2010 research demonstration of vertical-gate 3D NAND; and a 2024 annual report describing proprietary 3D NAND technology in mass production. Those milestones represent different stages of development, not a single uninterrupted product timeline.
What technologies has Macronix developed for non-volatile memory?
Non-volatile memory retains stored information without continuous power. Macronix’s company materials describe several forms of it, from ROM made for customer-specific content to Flash products and embedded memory technologies offered through foundry services. The technologies differ in architecture, intended use and the evidence available about their maturity.
| Technology | Role described in Macronix materials | Evidence and date |
|---|---|---|
| ROM, including XtraROM and NBit-based options | Customized, programmed memory products; Macronix describes programming and content-protection options. | Current company ROM product page; NBit announced in 2005. |
| NOR Flash | Flash product families that include serial NOR devices. The live product page lists densities, interfaces, voltage and other model-specific attributes. | Current company Serial NOR product page. |
| NAND Flash | Macronix’s 2024 annual report describes proprietary NAND Flash and 3D NAND technology. | Company-reported mass-production status in the 2024 annual report, published in 2025. |
| Embedded NVM | Memory integrated into the company’s foundry services. | The 2024 annual report identifies mature proprietary 0.11 μm embedded NVM technology. |
These descriptions establish the breadth of the portfolio, but not a head-to-head performance ranking against other manufacturers. The sources are Macronix’s own company materials, so claims about its products and development are attributed to the company.
What is Macronix NBit memory?
NBit is Macronix’s nitride-based charge-trap memory technology. In its June 7, 2005 announcement, the company introduced it as a two-bit-per-cell approach intended for NOR Flash and Mask ROM. Storing multiple bits in a cell is the architectural idea behind the name; it does not by itself establish the speed, endurance or cost of a particular device.
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How NBit relates to XtraROM
Macronix’s current ROM materials describe XtraROM as a ROM offering with customer-specific programming options and content-protection schemes. The company says NBit can support higher-density customized ROM products. Its ROM page describes NBit/NBIT architectures with either two or four bits per cell and also lists programming, manufacturing, technical consulting, development and design services.
Those current descriptions broaden the architecture options beyond the two-bit-per-cell version in the 2005 announcement. The announcements and current product page should be read as evidence from different dates, rather than as proof that every option was available in 2005.
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What did Macronix demonstrate in 2010?
On June 24, 2010, Macronix announced research on an eight-layer, 75 nm half-pitch vertical-gate 3D NAND Flash device using a junction-free BE-SONOS device. The figures describe the company’s reported research demonstration, not a present-day production specification. Macronix also said the work had been selected as a highlight paper at the 2010 Symposium on VLSI Technology.
What is BE-SONOS?
In the announcement, Macronix described BE-SONOS as a charge-trapping technology. The 2010 work is evidence of research into a particular 3D NAND structure; it is separate from the later annual-report statement about proprietary 3D NAND mass production.
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What does the ReRAM paper establish?
The same 2010 announcement identified a research paper on TiTe-buffered Cu-GeSbTe/SiO2 electrochemical ReRAM. That establishes research activity, but the company sources cited here do not establish ReRAM as a current commercial Macronix product or resolve whether it was commercialized later.
What does Macronix say was in production by 2024?
Macronix’s 2024 annual report, published in 2025, describes proprietary design and mass-production process technology for 3D NAND Flash. It also says Macronix independently developed and mass-produced proprietary NAND Flash. These are statements in that 2024 report; they should not be read as a fresh verification of product status in 2026.
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The report describes a broader development program as well, naming ArmorFlash, 1.2V SPI NOR, OctaFlash and ArmorBoot among product-development areas. It also identifies mature proprietary 0.11 μm embedded NVM technology integrated into foundry services. The report does not, in the material cited here, supply a complete year-by-year history linking each named product to a launch date.
Independent reader supportYour contribution helps us test, update, and keep practical guides available for everyone.How much did Macronix report spending on R&D?
NT$6,730,413 thousand (26.00% of operating revenue) — Macronix International Co., Ltd., 2024. This is the R&D expense figure and share of operating revenue reported in the company’s 2024 annual report.
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How should engineers compare Macronix memory options?
Choose by the device’s intended job and the exact part’s specifications, rather than by the memory label alone. ROM, NOR, NAND and embedded NVM represent different product or integration contexts; a broad architecture description is not a substitute for a datasheet.
- For serial NOR: Macronix’s product page lists MX25 and MX66 families and model-level information such as density, voltage, package, interface and lifecycle status. The page describes devices ranging from 512 Kb to 2 Gb; check the live listing and datasheet for the exact model before designing around a value.
- For custom ROM: Review the required content, programming arrangement and any protection scheme with Macronix, since the company describes tailored services rather than a single universal ROM configuration.
- For NAND or embedded NVM: Confirm the specific device or foundry offering, process, integration requirements and current availability. The annual report establishes company-reported technology and production claims but is not a current part-level selection guide.
For any component decision, compare density, supply voltage, I/O mode, package, protection or ECC features, temperature grade and lifecycle status against the application’s requirements. Some product-page entries may be under development, and lifecycle or availability details can change.
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