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1Scan for outdated or missing drivers - takes under a minute2Clear out junk files and repair common Windows errors3Fix the driver behind crashes, sound loss and screen glitchesOn August 29, 2003, HOYA was preparing EUV masks and mask blanks for shipment to photomask manufacturers and device makers—not announcing a current product release. The samples were intended to help those companies develop inspection and metrology methods needed before commercial EUV mask production could begin.
What HOYA was preparing in 2003
EE Times reported that HOYA planned to supply samples for feasibility studies. The goal was to give the industry materials with which to work out how to inspect and measure EUV masks and blanks. These were development samples, not evidence that commercial EUV mask making was ready to begin. EE Times, August 29, 2003
A mask blank is the unpatterned substrate from which a photomask is made. HOYA describes semiconductor blanks as glass substrates coated with multiple metal-film layers. After patterning, the photomask acts as a master plate for transferring circuit patterns onto semiconductor wafers. HOYA’s semiconductor materials overview
Why inspection and metrology were crucial
EUV blanks rely on a multilayer coating whose structure must be controlled with high precision. The 2003 report described blanks with about 40 alternating silicon and molybdenum layers. Each layer contributes to how the blank reflects EUV light, so errors in deposition or defects in the stack can compromise its performance.
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HOYA’s prototype masks were reported at a 65% reflection rate. That figure is a result reported for prototypes in 2003, not a current HOYA product specification. The report described reflection as an indicator of coating quality. Inspection and metrology work would help manufacturers detect defects and evaluate the optical properties of the blank and finished mask before relying on them for production.
Defectivity and cost were linked
The report identified the ability to make defect-free blanks as central to mask cost. It also relayed that a lithography manager at a U.S. semiconductor maker viewed keeping EUV masks below $100,000 per layer as essential for device makers. The manager was not named, and the figure reflects a cost threshold discussed in that 2003 report—not a current mask price or a statement of what masks cost today.
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That concern illustrates why feasibility work extended beyond making a reflective multilayer. Manufacturers needed processes to find and manage defects while developing masks that could be produced economically.
What has changed—and what remains difficult
HOYA’s reported business outlook
In its FY25 outlook, published in HOYA’s Integrated Report 2026, the company said demand for EUV mask blanks had grown robustly, citing expansion of the AI semiconductor market, continued process miniaturization and a rise in design patterns. HOYA said it aims to maintain a leading position and is developing products for phase-shift masks as well as High-NA and Hyper-NA lithography. These are company statements about its business and development plans. HOYA Integrated Report 2026
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HOYA expects medium-term EUV mask-blank market growth to exceed 10%. It also plans a Singapore plant with an initial investment of approximately 42 billion yen; the company says the facility is scheduled to start operations in FY28. These are projections and plans, not completed results. HOYA states: “The new plant is scheduled to commence operations in FY28, with an initial investment of approximately 42 billion yen.”
Materials and fabrication still interact
A 2026 EUVL and Source Workshop abstract by authors from HOYA’s LSI Division discusses capping films for next-generation EUV blanks. Capping films protect the multilayer during mask making, but dry etching, cleaning and repair can affect film surfaces, EUV reflectivity and durability. The authors describe improving capping films or optimizing etching to reduce damage. This shows that later-generation blanks still require careful management of materials and processing throughout mask fabrication. EUVL and Source Workshop proceedings
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A separate abstract in the same proceedings addresses in-situ monitoring during molybdenum-silicon multilayer deposition. It identifies control of central wavelength and reflectance, along with deposition-tool stability, vacuum compatibility and cost, as considerations. It describes a technical equipment category; it does not establish a particular supplier relationship or endorse a product.
Independent reader supportYour contribution helps us test, update, and keep practical guides available for everyone.A later HOYA video is not the 2003 sample announcement
HOYA published a video about its EUV photomask blanks on June 6, 2025. That item confirms the video’s publication date; it is not a new announcement that the 2003 samples were being shipped. HOYA news item, June 6, 2025
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Why the 2003 report matters
The 2003 sample effort addressed a practical prerequisite for EUV lithography: manufacturers needed ways to inspect and measure masks and blanks before commercial production could rely on them. The historical 65% reflection result, the roughly 40-layer stack and the reported cost concern describe that early feasibility context. HOYA’s later statements point to continued demand and development, while the 2026 workshop topics show that film durability, reflectivity and process control remain important technical considerations.
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