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X-FAB announced a process-specific non-volatile memory offering for its 110nm automotive XT011 BCD-on-SOI platform: a 32KByte embedded Flash macro paired with an additional 4Kbit EEPROM. The vendor says the two memories share control circuitry and serve different roles, particularly when a design must handle frequent data changes or high operating temperatures.
What X-FAB announced
In a December 3, 2024 announcement, X-FAB said designers could use the 32KByte Flash IP macro together with 4Kbit of EEPROM on XT011. X-FAB attributes the memory approach to its SONOS technology. This is foundry IP intended for integration into a chip designed on the process, not a standalone Flash device that can be purchased and connected to another system.
The announcement describes both memory elements as part of one macro with shared control circuitry. It specifies a 64-bit bus with 8-bit ECC for Flash and 14-bit ECC for EEPROM. X-FAB says the ECC arrangement enables “zero-PPM error performance in deployed devices integrating it.” The announcement does not provide the test population or methodology behind that claim, so it should be understood as a vendor claim rather than an independently verified error rate.
How Flash and EEPROM differ in the macro
X-FAB presents the pairing as a way to put data with different access and temperature needs in the appropriate memory. Its stated roles and limits are:
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| Memory | Role described by X-FAB | Temperature details in the announcement |
|---|---|---|
| 32KByte embedded Flash | Stores data; EEPROM can reduce Flash write activity by handling more frequent writes. | Reads across −40°C to 175°C. Flash programming is described as occurring below 125°C. |
| 4Kbit EEPROM | Handles more frequent writes and can cache data when conditions are unsuitable for Flash programming. | Writes up to 175°C. X-FAB says cached data can later be moved to Flash when the temperature falls below 125°C. |
These are capabilities described for the announced macro, not a complete specification for every XT011 design. The announcement does not state endurance-cycle counts or data-retention duration, so those details cannot be inferred from the temperature ranges.
Where XT011 fits
XT011 is X-FAB’s 110nm automotive BCD-on-SOI platform. X-FAB describes it as combining SOI wafers and deep-trench isolation with high-voltage CMOS options, analog and digital integration, and non-volatile memory. Its platform overview gives an operating range up to 175°C and identifies automotive, industrial, and medical applications.
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The process context matters: access to the macro depends on designing with the XT011 foundry platform and its process-specific design resources. The announcement is therefore most relevant to semiconductor design teams assessing foundry access, IP availability, process support, and qualification evidence—not to buyers looking for a general-purpose memory component.
XT011 compared with XT018
In a June 2023 XT011 announcement, X-FAB compared the platform with its XT018 180nm process. The figures below are X-FAB-reported comparisons from that announcement, not independent head-to-head benchmarks.
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| Comparison | X-FAB-reported XT011 result versus XT018 |
|---|---|
| Standard-cell library density | Twice the density. |
| SONOS embedded Flash implementation area | 35% less area. |
| High-voltage N-channel on-resistance performance | More than 25% improvement. |
Those comparisons address selected platform characteristics; they do not establish which process is the better fit for a particular chip. The required high-voltage options, design constraints, and the foundry’s process documentation would matter to that decision.
Independent reader supportYour contribution helps us test, update, and keep practical guides available for everyone.What is—and is not—established about capacity and qualification
X-FAB’s 2024 announcement said 64KByte and 128KByte Flash options, as well as larger EEPROM, were planned from 2025 onward. That was a roadmap statement. The XT011 platform overview does not confirm that those larger capacities subsequently became available, so only the announced 32KByte Flash and 4Kbit EEPROM combination is established here.
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The available announcements and platform information do not provide pricing, licensing terms, macro dimensions, endurance or retention figures, customer implementation results, or a qualification report. A design team evaluating the offering would need to confirm current IP availability and obtain the applicable process and qualification materials directly from X-FAB.
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