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Toshiba America Electronic Components announced an expansion of its MOSBD line on January 23, 2008. The TPCA8A02-H and TPC8A03-H combined a power MOSFET and a Schottky barrier diode on one die for high-efficiency DC-DC converters in notebook PCs, portable devices and other power-managed electronics. EDN reported the announcement on January 29, 2008. This is a historical product announcement, not a current launch or confirmation that either part remains available.
What “MOSBD” means
A MOSBD integrates a power metal-oxide-semiconductor field-effect transistor (MOSFET) and a Schottky barrier diode in a single semiconductor device. In a conventional converter, those functions may be separate components connected on the circuit board. The integrated approach targets synchronous or asynchronous DC-DC power stages where switching loss, conduction loss and board area matter.
Why Toshiba integrated the two devices
Less board area and fewer interconnects
As reported by EDN, Toshiba’s rationale was that putting the MOSFET and diode on one die could save board space and eliminate external interconnects between them. Toshiba also said this could reduce wiring resistance and inductance. Those are stated design benefits, not independent measurements of converter efficiency.
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The 2008 report described the parts as using Toshiba U-MOS V, which it characterized as a fifth-generation fast-switching process. It also reported Al-Strap connections in place of conventional wire bonds to reduce on-state resistance. These descriptions apply to the historical announcement and do not establish current manufacturing status.
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Historical parts and specifications
The following values were reported by EDN from Toshiba’s 2008 announcement. “Typical” resistance is not a guaranteed maximum, and the sample prices were launch-era figures rather than current quotations.
| Part | Drain-source voltage | Maximum drain current | Typical RDS(on) | Package | 2008 sample price |
|---|---|---|---|---|---|
| TPCA8A02-H | 30 V | 34 A | 4.8 mΩ | SOP Advance, 5 × 6 × 0.95 mm | $0.55 (2008 sample price) |
| TPC8A03-H | 30 V | 15 A | 5.1 mΩ | SOP-8, 5 × 6 × 1.6 mm | $0.50 (2008 sample price) |
Samples were reported as available at the time of the announcement. Neither the 2008 report nor the cited current Toshiba portfolio establishes present-day stock, lifecycle status or pricing for these exact part numbers.
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- Each type of component is contained in a separate compartment with lid and label
How integration can affect a DC-DC converter
Conduction path
MOSFET conduction loss is strongly affected by RDS(on) and current. Lower resistance generally means less I²R loss at a given current, but the published figures above are typical values under datasheet conditions and cannot by themselves predict a converter’s total efficiency.
Switching loop
Shorter connections between the switching transistor and freewheel or commutation diode can reduce parasitic resistance and inductance. The practical result depends on the converter topology, switching frequency, layout, gate drive and operating temperature.
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Thermal and electrical limits
A 30 V drain-source rating does not mean either device is suitable for every 30 V rail. Designers must include transients and ringing, observe current and power limits, and verify thermal performance in the actual package and PCB layout.
What the two parts were intended to serve
- High-efficiency DC-DC converters
- Notebook computers
- Portable electronics
- Other equipment requiring compact, efficient power management
These application targets describe Toshiba’s 2008 positioning; they are not evidence that the parts are recommended for a current design.
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What to check before using one today
For a new or repair design, treat TPCA8A02-H and TPC8A03-H as historical references until a current manufacturer datasheet and supply record are found. Toshiba’s current US diode portfolio describes Schottky-barrier products ranging from general-purpose to power-line applications, and identifies silicon-carbide Schottky diodes for low-loss conversion such as server power supplies and solar power conditioners. That portfolio context does not identify a direct replacement for either 2008 MOSBD part.
- Confirm lifecycle: Check Toshiba’s current product pages, datasheet revision and lifecycle notice for the exact part number.
- Verify electrical ratings: Compare voltage rating with worst-case spikes, continuous and peak current, RDS(on), diode forward voltage, reverse leakage and switching characteristics.
- Check thermal limits: Use the current package thermal data, board copper area, ambient range and converter duty cycle to calculate junction temperature.
- Validate the footprint: Compare the actual land pattern and package height with the historical 5 × 6 mm packages and your PCB constraints.
- Confirm supply: Check authorized distributors and manufacturer stock rather than relying on the 2008 sample prices.
- Evaluate alternatives: If the integrated part is unavailable, compare a modern integrated MOSFET-diode device or separate MOSFET and Schottky diode using the same electrical, thermal and layout criteria.
Bottom line
Toshiba’s January 2008 MOSBD expansion paired a MOSFET and Schottky barrier diode on one die to target compact, efficient DC-DC converters. TPCA8A02-H offered the higher reported current rating, while TPC8A03-H used a thinner package; both were 30 V devices with milliohm-scale typical on-resistance. Because the announcement and prices are nearly two decades old, a current design should proceed only after verifying today’s datasheet, lifecycle status, thermal data and supplier availability.
Quick Recap
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Product prices and availability are accurate as of the date/time indicated and are subject to change. Any price and availability information displayed on Amazon at the time of purchase will apply.
