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Toshiba and SanDisk began their flash-memory partnership in May 2000, when they announced FlashVision, a 50–50 production venture using fabrication space at Dominion Semiconductor in Manassas, Virginia. The companies combined Toshiba’s semiconductor process expertise with SanDisk’s multilevel-cell technology, then expanded cooperation into NAND research, product development and additional manufacturing ventures in Japan. The current relationship is not legally described as Toshiba–SanDisk: official 2026 announcements identify Kioxia and SanDisk as the partners continuing the Yokkaichi and Kitakami work.
When did Toshiba and SanDisk start their flash-memory joint venture?
FlashVision was announced on May 10, 2000. Toshiba and SanDisk said each company would receive 50% of FlashVision’s production and market its own share independently. The planned output was NAND flash wafers intended primarily for memory cards used in digital cameras, digital music players and future mobile phones.
Toshiba’s announcement described a planned investment of USD 700 million to equip existing Dominion Semiconductor fabrication space in Manassas. That amount and the production split were announced plans at the time, not evidence that every projection was later achieved.
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What technology did the companies combine?
Toshiba’s process technology
Toshiba supplied semiconductor manufacturing-process expertise: the methods needed to fabricate flash-memory devices on silicon wafers.
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- Compatible with Nintendo-Switch (NOT Nintendo-Switch 2)
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- Increase your TV show, movie, and Full HD video[4] recording collections dramatically with up to a massive 1.5TB[1].
- Transfer files fast with up to 150MB/s[2] read speeds and SanDisk MobileMate USB micro 3.0 microSD card reader[6].
- Load apps faster with A1-rated performance[3].
SanDisk’s multilevel-cell technology
SanDisk contributed its multilevel-cell (MLC) technology, which stores more than one bit per memory cell. The companies presented these capabilities as complementary rather than as a simple equipment-sharing deal.
Joint memory development
The May 2000 announcement described joint development of 512-megabit, 1-gigabit and 2-gigabit flash memories, along with future generations. Later company descriptions characterized the relationship as extending beyond wafer production to NAND research, product development and intellectual property.
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- Save time with card offload speeds of up to 190MB/s powered by SanDisk QuickFlow Technology (Up to 190MB/s read speeds, engineered with proprietary technology to reach speeds beyond UHS-I 104MB/s, requires compatible devices capable of reaching such speeds. Based on internal testing; performance may be lower depending upon host device interface, usage conditions and other factors. 1MB=1,000,000 bytes. SanDisk QuickFlow Technology is only available for 64GB, 128GB, 256GB, 400GB, 512GB, and 1TB capacities. 1GB=1,000,000,000 bytes and 1TB=1,000,000,000,000 bytes. Actual user storage less.)
- Pair with the SanDisk Professional PRO-READER SD and microSD to achieve maximum speeds (sold separately)
- Up to 130MB/s write speeds for fast shooting (Based on internal testing; performance may be lower depending upon host device interface, usage conditions and other factors. 1MB=1,000,000 bytes.)
- 4K and 5K UHD-ready with UHS Speed Class 3 (U3) and Video Speed Class 30 (V30) (Compatible device required. Full HD (1920x1080), 4K UHD (3840 x 2160), and 5K UHD (5120 X 2880) support may vary based upon host device, file attributes and other factors. See HD page on SanDisk site. UHS Speed Class 3 (U3) designates a performance option designed to support real-time video recording with UHS-enabled host devices. Video Speed Class 30 (V30), sustained video capture rate of 30MB/s, designates a performance option designed to support real-time video recording with UHS-enabled host devices. See the SD Association’s official website.)
Yasuo Morimoto, then president and CEO of Toshiba Corporation Semiconductor Company, summarized the intended combination in Toshiba’s May 10, 2000 announcement: “FlashVision will bring together Toshiba’s advanced semiconductor process technologies and SanDisk’s original multilevel cell technology.”
How did the partnership expand in Japan?
By October 2008, Toshiba described two production ventures—Flash Partners and Flash Alliance—operating Fab 3 and Fab 4 at Toshiba’s Yokkaichi Operations in Japan. Toshiba said equipment investment and capacity allocation were equal at that time.
Rank #3
- Compatible with Nintendo-Switch (NOT Nintendo-Switch 2)
- Save time with card offload speeds of up to 190MB/s powered by SanDisk QuickFlow Technology (Up to 190MB/s read speeds, engineered with proprietary technology to reach speeds beyond UHS-I 104MB/s, requires compatible devices capable of reaching such speeds. Based on internal testing; performance may be lower depending upon host device interface, usage conditions and other factors. 1MB=1,000,000 bytes. SanDisk QuickFlow Technology is only available for 64GB, 128GB, 256GB, 400GB, 512GB, and 1TB capacities. 1GB=1,000,000,000 bytes and 1TB=1,000,000,000,000 bytes. Actual user storage less.)
- Pair with the SanDisk Professional PRO-READER SD and microSD to achieve maximum speeds (sold separately)
- Up to 90MB/s write speeds for fast shooting (Based on internal testing; performance may be lower depending upon host device interface, usage conditions and other factors. 1MB=1,000,000 bytes.)
- 4K and 5K UHD-ready with UHS Speed Class 3 (U3) and Video Speed Class 30 (V30) (Compatible device required. Full HD (1920x1080), 4K UHD (3840 x 2160), and 5K UHD (5120 X 2880) support may vary based upon host device, file attributes and other factors. See HD page on SanDisk site. UHS Speed Class 3 (U3) designates a performance option designed to support real-time video recording with UHS-enabled host devices. Video Speed Class 30 (V30), sustained video capture rate of 30MB/s, designates a performance option designed to support real-time video recording with UHS-enabled host devices. See the SD Association’s official website.)
The same October 20, 2008 announcement also reported a non-binding plan to reallocate wafer output and equipment ownership. Consequently, the 2008 arrangement should be treated as a dated description, not as a permanent ownership or capacity formula.
Toshiba also forecast more than 200% average annual bit growth in 2008. That was a company forecast made under the market conditions of that period, not a current industry statistic or a verified long-term result.
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Toshiba–Western Digital conflict during the 2017 memory-business sale
Toshiba separated its memory business into Toshiba Memory Corporation on April 1, 2017. In a June 2, 2017 account, Toshiba said Toshiba Memory Corporation managed Yokkaichi’s actual operations and said Western Digital—SanDisk’s parent—had objected to Toshiba’s third-party investment process. This describes Toshiba’s position during an active corporate dispute; it should not be read as an independent finding about the parties’ legal claims.
On December 13, 2017, Toshiba, Toshiba Memory Corporation and Western Digital announced a global settlement intended to resolve litigation and arbitration and strengthen and extend their flash-memory relationship. The announcement included planned joint participation in investment rounds for Fab 6 at Yokkaichi.
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What is the relationship called today?
Current official announcements use the names Kioxia and SanDisk. Toshiba Memory Corporation later became Kioxia, so the corporate identity changed even though the long-running manufacturing relationship continued through successor agreements.
Yokkaichi agreements extended through 2034
On January 29, 2026, Kioxia and SanDisk announced that they extended their Yokkaichi joint-venture agreements from the previous December 31, 2029 expiry to December 31, 2034. Under the announced arrangement, SanDisk will pay Kioxia USD 1.165 billion for manufacturing services and continued supply in installments from 2026 through 2029.
Kitakami Fab2 and 10th-generation 3D flash
On July 3, 2026, Kioxia and SanDisk announced production of their 10th-generation 3D flash-memory technology at Kitakami Plant Fab2. This demonstrates current cooperation under the Kioxia–SanDisk names, not an unchanged Toshiba–SanDisk legal entity.
Long-term investment plan
On August 27, 2026, Kioxia and SanDisk announced anticipated investment exceeding USD 31 billion in Japan through 2032, contingent on government support. They also reported more than USD 50 billion invested in Japan over the preceding 25 years. Both figures are company-reported; the USD 31 billion figure is a future plan with an explicit condition.
Timeline of the flash-memory relationship
| Date | Development | What it means |
|---|---|---|
| May 10, 2000 | FlashVision announced at Dominion Semiconductor in Manassas, Virginia. | Toshiba and SanDisk planned equal production shares and separate marketing of their output. |
| May 10, 2000 | Joint technology program announced. | Toshiba process technology and SanDisk MLC technology were combined for new NAND generations. |
| October 20, 2008 | Flash Partners and Flash Alliance described at Yokkaichi Fab 3 and Fab 4. | Equal equipment investment and capacity allocation were reported for that period, alongside a non-binding reallocation plan. |
| April–June 2017 | Toshiba Memory Corporation was separated from Toshiba’s memory business; Toshiba described a dispute with Western Digital. | The memory-business sale process put the joint manufacturing relationship under corporate and legal pressure. |
| December 13, 2017 | Global Toshiba–Western Digital settlement announced. | The parties said they would resolve disputes and extend cooperation, including planned Fab 6 investment participation. |
| January 29, 2026 | Kioxia–SanDisk Yokkaichi agreements extended. | The announced term now runs through December 31, 2034. |
| July 3, 2026 | 10th-generation 3D flash production announced at Kitakami Plant Fab2. | Current manufacturing cooperation is identified as Kioxia–SanDisk. |
| August 27, 2026 | Japan investment plan announced. | More than USD 31 billion is anticipated through 2032, subject to government support. |
How to describe the history accurately
- Use 2000 for the origin: FlashVision is the Toshiba–SanDisk venture announced in May 2000.
- Separate technology from manufacturing: The partnership included process technology, MLC technology, NAND development and intellectual property, not only factory capacity.
- Date facility arrangements: The 2008 Yokkaichi description applied to that period and included a non-binding change plan.
- Identify the 2017 parties correctly: The dispute and settlement involved Toshiba, Toshiba Memory Corporation and Western Digital, SanDisk’s parent.
- Use current corporate names: Kioxia and SanDisk are the partners named in 2026 manufacturing, supply and investment announcements.
The Bottom Line
FlashVision began the Toshiba–SanDisk relationship in 2000 by pairing Toshiba manufacturing technology with SanDisk multilevel-cell expertise. The collaboration grew into Yokkaichi and other NAND ventures, survived the 2017 Toshiba–Western Digital dispute, and now continues in official announcements as a Kioxia–SanDisk partnership, with Yokkaichi agreements extended through 2034.
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