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Infineon announced its CoolGaN Transistor G5 medium-voltage family on 14 April 2025, describing it as the first industrial GaN power-transistor family with an integrated Schottky diode. The first announced part is a 100 V transistor with 1.5 mΩ on-resistance in a 3 × 5 mm PQFN package. Infineon said engineering samples and a target datasheet were available on request; its announcement did not give a price or confirm retail availability. Infineon’s announcement
What Infineon launched
The CoolGaN Transistor G5 is a medium-voltage gallium-nitride (GaN) power-transistor family with an integrated Schottky diode. Infineon’s 14 April 2025 announcement called it the world’s first industrial GaN power-transistor family with this integration. The first announced device has these specifications:
- Voltage rating: 100 V
- On-resistance: 1.5 mΩ
- Package: 3 × 5 mm PQFN
Infineon said engineering samples and a target datasheet were available on request. The announcement did not identify an exact distributor SKU, publish a price, or confirm that the part was available for general purchase. “First” here is Infineon’s characterization of an industrial product family, not an independently established category-wide assessment.
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One free scan finds every outdated or missing driver and matches the right update for your exact hardware.Free scan · exact hardware matchWhy put a Schottky diode inside a GaN FET?
GaN transistors do not behave like silicon MOSFETs with a conventional body diode. During reverse conduction—such as when current flows during the dead time between switching events—the effective voltage drop and the controller’s dead time can contribute to power loss. Infineon says its integrated Schottky diode reduces those reverse-conduction losses.
#1 Best Overall
- ALLECIN IRF520 MOSFET Transistors - commonly used electronic components.
- Rated Voltage: 100V ; Rated Current: 9.7A ; Dissipation Power: 60W.
- Features & Advantages: High power load handling capability & Low power loss & Fast switching speed.
- Widely Application: IRF520 MOSFET Transistors is widely used in various applications.
- Humanized packaging for easy storage and use. # Printed markings for easy identification.
Infineon also says the integration can relax dead-time requirements and broaden compatibility with high-side gate drivers and controllers. For a power-stage designer, those changes may simplify circuit design and reduce the number of external components. The extent of any efficiency, footprint, thermal, or bill-of-materials improvement depends on the surrounding converter and operating conditions; the launch announcement provides no independent comparative test data or quantified savings.
Where Infineon expects the device to be used
The announced applications are power-conversion designs in which switching losses, heat, board area, and component count can affect system performance and cost:
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- ALLECIN IRF540 IRF540N MOSFET Transistors - commonly used electronic components.
- Rated Voltage: 100V ; Rated Current: 33A.
- Features & Advantages: Long service life performance ; Rugged design ; Good switching characteristics.
- Widely Application: IRF540 IRF540N MOSFET Transistors is widely used in various applications.
- Humanized packaging for easy storage and use. # Printed markings for easy identification.
- Intermediate-bus converters (IBCs) for servers and telecommunications equipment
- DC-DC converters
- Synchronous rectifiers in USB-C battery chargers
- High-power power supplies
- Motor drives
The announcement names these as target applications; it does not establish that the device has been qualified or adopted in every listed system.
What designers should compare before choosing it
An integrated diode is a design option, not by itself proof of a more efficient or lower-cost converter. To assess it against a conventional GaN FET paired with an external Schottky diode, compare the complete power stage under the intended operating conditions.
Rank #3
- High Power Capability: IRF520N is designed for high-power applications, with the ability to withstand larger currents and voltages, making it a reliable choice for demanding electronic projects
- Low Power Loss: With lower resistance in the on state, IRF520N minimizes power loss, delivering optimal performance and efficiency
- Fast Switching Speed: IRF520N is engineered for high-frequency circuit design, making it ideal for speedy and precise switching of electronic signals
- Excellent Thermal Stability: As a power field effect transistor, IRF520N features outstanding thermal stability, which results in improved equipment reliability, particularly during high-power operation
- Versatile Applications: With its exceptional performance, IRF520N is suitable for a wide variety of applications across multiple fields, including communications, automobiles, industry, lighting, and more
| Design factor | What to evaluate |
|---|---|
| Reverse-conduction loss | Measure or model losses at the expected current, switching frequency, and operating conditions. |
| Dead time | Check the controller’s required timing and whether the integrated diode permits a useful adjustment. |
| Driver compatibility | Confirm the selected high-side driver and controller work with the device’s electrical characteristics. |
| Board area and component count | Compare the complete layouts, including any external diode and supporting components. |
| Thermal behavior | Evaluate losses and temperature in the actual board and cooling arrangement. |
| Electrical fit | Check voltage rating, on-resistance, switching behavior, and suitability for the converter’s operating point. |
| Cost and supply | Compare current pricing and availability for the exact part and region; Infineon’s announcement did not state a price or distributor listing. |
Infineon’s stated benefits are manufacturer claims. Its launch announcement does not provide a side-by-side benchmark against a GaN FET with an external diode, so it cannot establish a universal efficiency gain or cost reduction.
Can you buy the 100 V, 1.5 mΩ transistor?
The 14 April 2025 announcement confirms only that engineering samples and a target datasheet were available on request. It does not confirm a public orderable part number, current stock, price, or Amazon listing. Designers seeking the device should ask Infineon or an authorized semiconductor distributor about the exact part number, regional availability, and datasheet status. Do not assume that availability statements for Infineon’s separate 650 V CoolGaN G5 products apply to this 100 V integrated-Schottky device.
Rank #4
- ALLECIN IRF510 MOSFET Transistor - commonly used electronic components.
- Current Rated: 5.6 A ; Voltage Rated: 100 V ; Power(Max): 43 W.
- Features & Advantages: High power handling & High voltage capability & Low power loss & High-quality materials.
- Widely Application: IRF510 MOSFET Transistor is widely used in various applications.
- Humanized packaging for easy storage and use. # Printed markings for easy identification.
How it fits into Infineon’s CoolGaN range
Infineon also announced a separate 650 V CoolGaN G5 discrete family in 2024 for applications including switched-mode power supplies, chargers, data-center and telecom rectifiers, renewable-energy systems, and motor drives. The orderability statement in that release concerns the 650 V products; it is not evidence that the 100 V transistor with an integrated Schottky diode is commercially available through the same channels. Infineon’s 650 V CoolGaN G5 announcement
Quick Recap
Best Value
- High Current Dual MOSFET: Dual MOSFET design delivers up to 15 A continuous and 30 A peak at 400 W; strong drive for DC loads; ideal as a dc motor speed controller for robots, pumps, fans
- Wide Voltage and PWM Control: Accepts DC 5-36 V and logic 3.3-20 V; supports 0-20 kHz PWM for smooth ramping and precise speed or dimming; use as a pwm controller or motor controller in labs and builds
- Compact DIY-Friendly Board: About 1.34 x 0.67 x 0.47 in; small mosfet kit fits tight enclosures; simple two wire input and output layout integrates with microcontroller pins and breadboards
- Versatile Applications: Adjust DC motor speed, LED brightness and bulb dimming; drive micro pumps and solenoids; clean PWM input supports stable response and low heat for longer component life
- Rugged Reliability: Operates from minus 40 to 85 °C; dual MOSFET layout resists voltage spikes and load surges; dependable motor driver for industrial, automotive and DIY use
Product prices and availability are accurate as of the date/time indicated and are subject to change. Any price and availability information displayed on Amazon at the time of purchase will apply.
