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ROHM silicon-carbide (SiC) MOSFETs can reduce energy lost as heat in an electric vehicle’s traction inverter. That inverter converts high-voltage battery DC into the AC waveforms that drive the motor. ROHM reports efficiency gains in specific simulations and has announced SiC deployments in several vehicle programs, but those figures are not guarantees of equivalent real-world range gains in every EV.
How does SiC improve an EV traction inverter?
A traction inverter switches battery power rapidly to control the electric motor. SiC MOSFETs are power switches made from silicon carbide rather than conventional silicon. ROHM describes them as capable of higher switching frequencies and higher voltage tolerance than silicon IGBTs, which are widely used in power conversion.
Switching a device on and off and conducting current through it both create losses. Reducing those losses means less electrical energy becomes heat inside the inverter. Depending on the complete system design, lower heat can ease cooling demands and leave more of the battery’s energy available for driving. SiC devices can also support more compact inverter designs, although packaging, cooling, and the rest of the powertrain determine the result.
The inverter is only one part of vehicle efficiency. Motor design, control software, battery voltage, thermal management, driving cycle, and ambient temperature also affect how much energy a vehicle uses. A semiconductor improvement therefore does not translate directly into the same percentage increase in driving range.
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What efficiency gains has ROHM reported?
ROHM Semiconductor’s 2024 results are simulations, not independent road tests. Its WLTC simulation compared fourth-generation SiC MOSFETs with conventional IGBTs in a C-segment EV inverter scenario.
| ROHM-reported result | Conditions and interpretation |
|---|---|
| 10% lower electricity cost in urban driving | WLTC simulation for a C-segment EV inverter, comparing fourth-generation SiC MOSFETs with conventional IGBTs; reported by ROHM in 2024. |
| 6% lower electricity cost across urban, suburban, and highway modes | The same type of ROHM 2024 WLTC simulation and comparison; this is a modeled result across the stated driving modes, not a universal vehicle-level saving. |
| Approximately 36% lower power in a 5 kW-output inverter comparison | ROHM’s 2024 comparison. The stated summary does not specify enough test conditions to treat this as a vehicle-efficiency or range figure. |
These figures show the potential of the device in the modeled or compared inverter setup. They do not establish that a production EV will consume 6% less energy on the road, or that its range will rise by 6%. To make that inference, the vehicle, inverter topology, test cycle, and measurement method would need to be held constant and reported.
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What is ROHM’s TRCDRIVE pack?
TRCDRIVE pack is ROHM’s family of two-in-one SiC molded power modules for xEV traction inverters. A two-in-one module combines two power-switch positions in a single package. ROHM’s 2024 release lists two 750 V models, identified as BSTxxxD08P4A1x4, and two 1,200 V models, identified as BSTxxxD12P4A1x1. The family is specified to support inverter output up to 300 kW; that is a family capability, not a rating for every vehicle installation.
ROHM says the modules combine fourth-generation SiC MOSFETs with low on-resistance and a package designed to increase heat-dissipation area. Press-fit control terminals are intended to simplify assembly, while a two-layer bus bar supports the internal power connection. Together, these design choices target lower switching losses, thermal performance, and compact inverter packaging.
| Published TRCDRIVE pack detail | What it tells an inverter designer |
|---|---|
| 750 V and 1,200 V model variants | Two voltage classes are listed in ROHM’s 2024 release. Select a module against the actual battery and inverter voltage requirements, not nominal pack voltage alone. |
| Up to 300 kW | Maximum stated power capability for the family; the release summary does not assign this limit to every model or operating condition. |
| 1.5 times the power density of general SiC molded modules | A ROHM-reported 2024 study comparison. The comparison is a manufacturer claim, and the supplied published summary does not specify the full measurement basis. |
| 5.7 nH main-wiring inductance | ROHM’s 2024 reported value for the TRCDRIVE pack main wiring. Lower inductance can help manage switching behavior, but system layout and operating conditions also matter. |
Which vehicles and suppliers have announced ROHM SiC adoption?
ROHM has announced deployments across several automotive programs. These announcements establish reported production or integration activity; they do not by themselves disclose vehicle-level efficiency measurements attributable to the SiC devices.
- BMW Neue Klasse: In a release dated September 17, 2026, ROHM said its SiC chips are integrated into BMW’s Neue Klasse electric powertrain architecture, also referred to as Gen 6. ROHM says they contribute to efficiency, performance, reliability, driving range, and charging performance. The announcement does not quantify those contributions independently.
- Geely’s ZEEKR X, 009, and 001: ROHM reported that its fourth-generation SiC MOSFET bare-chip power modules are used in traction inverters for these models, with mass-production shipments beginning in 2023.
- Schaeffler inverter brick for a major Chinese automaker: ROHM announced mass production of a high-voltage inverter brick using its SiC MOSFET bare chips. ROHM describes it as compact, efficient, and scalable, with RMS current up to 650 A and operation at battery voltages above the usual 800 V range. The announcement does not name the automaker.
How should engineers compare SiC inverter options?
A module’s headline voltage or efficiency claim is not enough to determine whether it is the right choice. Compare devices and complete inverter designs on the conditions that matter to the intended vehicle and production program:
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- ALLECIN IRF4905 IRF4905P MOSFET Transistors - commonly used electronic components.
- Drain-Source Voltage (Vds): 55V ; Continuous Drain Current (Ids): 74A ; Power(Max): 200W.
- Features & Advantages: Advanced process technology & Ultra low on-resistance & Fast switching.
- Widely Application: IRF4905 IRF4905P MOSFET Transistors is widely used in various electronic components.
- Humanized packaging for easy storage and use. # Printed markings for easy identification.
- Drive-cycle conversion losses: Compare measured or modeled losses over the same cycle, load profile, and thermal conditions—not just at one operating point.
- Voltage and current headroom: Check the system’s operating range and transient requirements against module ratings and the intended battery architecture.
- Switching frequency and inductance: Evaluate switching losses and electromagnetic behavior in the actual inverter layout. A module inductance figure alone does not describe the full system.
- Power density and cooling: Compare the complete module and cooling solution, including thermal interfaces and packaging, rather than treating a component-level power-density claim as a vehicle result.
- Integration and assembly: Assess terminals, bus bars, package dimensions, and manufacturing requirements against the inverter design and production line.
- Qualification, reliability, and scale: Confirm the evidence relevant to the vehicle program, including qualification status, supply arrangements, and manufacturing readiness.
- Reproducible vehicle-level results: Prefer independently measured road or dynamometer comparisons with stated test conditions when evaluating real-world energy use or range.
ROHM’s broader EcoSiC portfolio includes SiC MOSFETs, SiC Schottky barrier diodes, full SiC power modules, gate drivers, and related devices. ROHM identifies traction inverters, onboard chargers, photovoltaic inverters, and xEV charging stations as application areas. The TRCDRIVE pack is specifically positioned for xEV traction inverters; it should not be confused with the company’s entire SiC portfolio.
Quick Recap
Best Value
- SiC MOSFET Included – Features a 1200V, 40mΩ silicon-carbide MOSFET in a TO-247-4 package for high-efficiency power conversion applications.
- Fast Recovery Diode – Comes with a 650V, 20A diode in a TO-220-2 package, ideal for high-frequency switching circuits and power modules.
- Stable Electrical Performance – Low conduction loss, fast switching characteristics, and excellent thermal stability for demanding circuits.
- Widely Used in Power Electronics – Suitable for engineering development, laboratory testing, educational demonstrations, and component replacement.
- Quality Packaging – Each component is individually protected to minimize handling marks and ensure safe storage and transport.
Product prices and availability are accurate as of the date/time indicated and are subject to change. Any price and availability information displayed on Amazon at the time of purchase will apply.
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